fdb8442 _f085 n-channel powertrench ? mosfet ?20 10 fairchild semiconductor corporation fdb8442 _f085 rev . a 1 www.fairchil dsemi.com 1 fdb8442 _f085 n-channel powertrench ? mosfet 40v, 80a, 2.9 m ? features ? typ r ds(on) = 2.1m ? at v gs = 10v, i d = 80a ? typ q g(10) = 181nc at v gs = 10v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? electronic steering ? integrated starter / alternator ? distributed power architectures and vrms ? primary switch for 12v systems l e a d f r e e m t a e l n t i o m p e n i may 20 10
fdb8442 _f085 n-channel powertrench ? mosfet fdb8442 _f085 rev . a 1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 40 - - v i dss zero gate voltage drain current v ds = 32v v gs = 0v - - 1 a t j = 150 c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 a 2 2.9 4 v r on ) drain to source on resistance i d = 80a, v gs = 10v - 2.1 2.9 m ? i d = 80a, v gs = 10v, t j = 175 c - 3.6 5.0 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 12200 - pf c oss output capacitance - 1040 - pf c rss reverse transfer capacitance - 640 - pf r g gate resistance v gs = 0.5v, f = 1mhz - 1.0 - ? q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 20v i d = 80a i g = 1ma - 181 235 nc q g(th) threshold gate charge v gs = 0 to 2v - 23 30 nc q gs gate to source gate charge - 49 - nc q gs2 gate charge threshold to plateau - 26 - nc q gd gate to drain ?miller? charge - 41 - nc ds( mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 40 v v gs gate to source voltage 20 v i d drain current continuous (t c <158 o c, v gs = 10v) 80 a drain current continuous (t amb = 25 o c, v gs = 10v, with r ja = 43 o c/w) 28 pulsed see figure 4 e as single pulse avalanche energy (note 1) 720 mj p d power dissipation 254 w derate above 25 o c1 . 7 w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc thermal resistance junction to case 0.59 o c/w r ja thermal resistance junction to ambient to-263, lin 2 copper pad area 43 o c/w device marking device package reel size tape width quantity _f085 24mm 800 units fdb8442 fdb8442 to-263ab 330mm
fdb8442_f085 n-channel powertrench ? mosfet fdb8442 _f085 rev . a1 www.fairchildsemi.com 3 electrical characteristics t j = 25c unless otherwise noted switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units t (on) turn-on time v dd = 20v, i d = 80a v gs = 10v, r gs = 2 ? --62ns t d(on) turn-on delay time - 19.5 - ns t r turn-on rise time - 19.3 - ns t d(off) turn-off delay time - 57 - ns t f turn-off fall time - 17.2 - ns t off turn-off time - - 118 ns v sd source to drain diode voltage i sd = 80a - 0.9 1.25 v i sd = 40a - 0.8 1.0 v t rr reverse recovery time i f = 75a, di/dt = 100a/ s - 49 64 ns q rr reverse recovery charge i f = 75a, di/dt = 100a/ s - 70 91 nc notes: 1: starting t j = 25 o c, l = 0.35mh, i as = 64a 2: pulse width = 100s. this product has been designed to meet the extreme test conditio ns and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconductor products ar e manufactured, assembled and tested under iso9000 and qs9000 quality systems certification.
fdb8442_f085 n-channel powertrench ? mosfet fdb8442 _f085 rev . a1 www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation muliplier t c , case temperature ( o c ) figure 2. 25 50 75 100 125 150 175 0 50 100 150 200 250 300 t c , case temperature ( o c ) i d , drain current (a) v gs = 10v current limited by package maximum continuous drain current vs case temperature figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z jc x r jc + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 transconductance may limit current in this region v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 25 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdb8442_f085 n-channel powertrench ? mosfet fdb8442 _f085 rev . a1 www.fairchildsemi.com 5 figure 5. 11 01 0 0 0.1 1 10 100 1000 limited by package 10us 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc 4000 forward bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 500 5000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2.02.53.03.54.04.55.0 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 012345 0 40 80 120 160 i d , drain current (a) v ds , drain to source voltage (v) v gs = 4v v gs = 10v v gs = 5v v gs = 4.5v pulse duration = 80 s duty cycle = 0.5% max saturation characteristics figure 9. 45678910 0 10 20 30 40 50 r ds(on) , drain to source on-resistance ( m ? ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c pulse duration = 80 s duty cycle = 0.5% max drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t j , junction temperature ( o c ) normalized drain to source on-resistance i d = 80a v gs = 10v pulse duration = 80 s duty cycle = 0.5% max normalized drain to source on resistance vs junction temperature typical characteristics
fdb8442_f085 n-channel powertrench ? mosfet fdb8442 _f085 rev . a1 www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 normalized gate threshold voltage t j , junction temperature ( o c ) v gs = v ds i d = 250 a normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 t j , junction temperature ( o c ) normalized drain to source breakdown voltage i d = 250 a figure 13. 0.1 1 10 100 1000 10000 c iss c oss c rss f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage ( v ) 50 40000 capacitance vs drain to source voltage figure 14. 0 50 100 150 200 0 2 4 6 8 10 v dd = 20v v dd = 25v v dd = 15v i d = 80a q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics
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